SSR2010Z Datasheet | SSDI

FEATURES : PIV: 100 Volts Low Reverse Leakage Current Low Forward Voltage Drop Guard Ring for Overvoltage Protection Isolated Hermetically Sealed Package Available in Glass or Ceramic Seal Packages Custom Lead Forming Available Eutectic Die Attach 175°C Operating Junction Temperature TX, TXV, and Space Level Screening Available - Available in the Following Configurations: TO-254: SSR2008M, SSR2008MUB, SSR2008MDB, SSR2009M, SSR2009MUB, SSR2009MDB, SSR2010M, SSR2010MUB, SSR2010MDB. TO-254Z: SSR2008Z, SSR2008ZUB, SSR2008ZDB, SSR2009Z, SSR2009ZUB, SSR2009ZDB, SSR2010Z, SSR2010ZUB, SSR2010ZDB 2/ MAXIMUM RATINGS Symbol SSR2008M & Z SSR2009M & Z SSR2010M & Z VRRM VRWM VR IO IFSM T OP & T stg Rθ JC Value 80 90 100 20 300 -65 to +175 1.0 Unit Volts Amps Amps ° Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current 1/ 3/ (Resistive Load, 60 Hz, Sine Wave, TC = 25°C) Peak Surge Current 3/ (8.3 ms Pulse, Half Sine Wave, TA = 25°C) Operating and Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTE: 3/ ° C/W 1/ 2/ 3/ Derate Linearly at 1A/°C for TC > 155°C. All Electrical Characteristics @25°C, Unless Otherwise Specified. pins 2 and 3 externally connected together NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0091H Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, Ca 90638 Phone: (562) 404-4474 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SSR2008M, SSR2008Z SSR2009M, SSR2009Z SSR2010M, SSR2010Z Symbol IF = 10 A IF = 15 A IF = 20 A IF = 10 A TA = 25°C TC = 100°C VF1 VF2 VF3 VF4 IR1 IR2 CJ ELECTRICAL CHARACTERISTICS 2/ (per leg) Instantaneous Forward Voltage Drop (300 - 500µs Pulse) Instantaneous Forward Voltage Drop (TA = -55°C, 300 - 500µs Pulse) Reverse Leakage Current (Rated VR , 300 µs pulse minimum) Junction Capacitance (VR = 10 V, f = 1MHz, TA = 25°C) CASE OUTLINE: TO-254...