SSR8045CTP Datasheet | SSDI

Features : - - - - - - - - - Low Reverse Leakage Low Forward Voltage Drop Guard Ring for Overload Protection Isolated Hermetically Sealed Power Package Available with Ceramic Seals w/ 40 mil pin Custom Lead Forming Available Eutectic Die Attach 175ºC Operating Temperature TX, TXV, and S Level Screening Available DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SSR8045 CT PA UB TX │ │ │ │ │ │ │ │ │ │ │ │ │ │ └ Screening 2/ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV Level │ │ S = S Level │ │ │ └ Lead Bending: 3/ │ __ = Straight │ UB = Up Bend │ DB = Down Bend │ └ Package: 3/ P = TO-259, 60 mil pin PA = TO-259, 40 mil pin CT CA D DR = mon Cathode = mon Anode = Doubler = Doubler Reverse └ Configuration: Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage Average Rectified Forward Current 4/ (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Peak Surge Current 4/ (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-259 (P) VRRM VRSM VR Io IFSM TOP & TSTG Total Per Leg RθJE 45 80 1200 -65 to +175 0.5 1.0 Volts Amps Amps ºC ºC/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RS0065G Solid State Devices, Inc. 14830 Valley View Blvd - La Mirada, Ca 90638 Phone: (562) 404-7855 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SSR8045CTP Series Electrical Characteristic 5/ Symbol Min Max Units Instantaneous Forward Voltage Drop (TA = 25ºC, 300 - 500usec Pulse) Instantaneous Forward Voltage Drop (TA = -55ºC, 300 - 500usec Pulse) Reverse Leakage Current (100% of rated VR, 300µs pulse min.) Junction Capacitance (VR=10VDC, TA=25ºC, f=1MHz) NOTES: IF = 10A IF = 20A IF = 40A IF = 20A TA = 25ºC TA =...