29EE512 - SST29EE512

Datasheet Summary

Description

The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Features

Single Voltage Read and Write Operations.
5.0V-only for SST29EE512.
3.0-3.6V for SST29LE512.
2.7-3.6V for SST29VE512.
Superior Reliability.
Endurance: 100,000 Cycles (typical).
Greater than 100 years Data Retention.
Low Power Consumption.
Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V.
Standby Current: 10 µA (typical).
Fast Page-Write Operation.
128 Bytes per Pag.

SST

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29EE512 SST29EE512 by SST - Datasheet Preview — Datasheet preview – 29EE512

Datasheet Details

Part number	29EE512
Manufacturer	SST
File Size	265.94 KB
Description	SST29EE512
Datasheet	29EE512 Datasheet
Additional preview pages of the 29EE512 datasheet.

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Full PDF Text Transcription

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512 Kilobit (64K x8) Page-Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 512 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 2.5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) Data Sheet • Fast Read Access Time – 5.0V-only operation: 70 and 90 ns – 3.0-3.6V operation: 150 and 200 ns – 2.7-3.

Published: Jul 12, 2015 |