39VF080 Datasheet | SST

FEATURES : - Organized as 1M x8 - Single Voltage Read and Write Operations - 3.0-3.6V for SST39LF080 - 2.7-3.6V for SST39VF080 - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption (typical values at 14 MHz) .. - Active Current: 12 m A (typical) - Standby Current: 4 µA (typical) - Auto Low Power Mode: 4 µA (typical) - Sector-Erase Capability - Uniform 4 KByte sectors - Block-Erase Capability - Uniform 64 KByte blocks - Fast Read Access Time: - 55 ns for SST39LF080 - 70 and 90 ns for SST39VF080 - Latched Address and Data - Fast Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical) - Block-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Byte-Program Time: 14 µs (typical) - Chip Rewrite Time: 15 seconds (typical) for SST39LF/VF080 - Automatic Write Timing - Internal VPP Generation - End-of-Write Detection - Toggle Bit - Data# Polling - CMOS I/O patibility - JEDEC Standard - Flash EEPROM Pinouts and mand sets - Packages Available - 40-lead TSOP (10mm x 20mm) - 48-ball TFBGA (6mm x 8mm) PRODUCT DESCRIPTION The SST39LF/VF080 devices are 1M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high-performance CMOS Super Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39LF080 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080 write (Program or Erase) with a 2.7-3.6V power supply. They conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39LF/ VF080 devices provide a typical Byte-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to indicate the pletion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are...