SST SST25VF080B
The SST25VF080B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve performance and reliability, while lowering power consumption.FEATURES
:● Single Voltage Read and Write Operations – 2.7-3.6V
● Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
● High Speed Clock Frequency – 50 MHz
● Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption: – Active Read Current: 10 mA (typical) – Standby Current: 5 µA (typical)
● Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks – Uniform 64 KByte overlay blocks
● Fast Erase and Byte-Program: – Chip-Erase Time: 35 ms (typical) – Sector-/Block-Erase Time: 18 ms (typical) – Byte-Program Time: 7 µs (typical)
● Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
● End-of-Write Detection – Software polling the BUSY bit in Status Register – Busy Status readout on SO pin in AAI Mode
● Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device
● Write Protection (WP#) – Enables/Disa...