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SST25VF080B Datasheet PDF

SST SST25VF080B

The SST25VF080B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve performance and reliability, while lowering power consumption.
Part No. SST25VF080B
Datasheet SST25VF080B Download
Manufacturer
SST
Description 8 Mbit SPI Serial Flash
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SST25VF080B datasheet page 1 preview

FEATURES

:
● Single Voltage Read and Write Operations – 2.7-3.6V
● Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3
● High Speed Clock Frequency – 50 MHz
● Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption: – Active Read Current: 10 mA (typical) – Standby Current: 5 µA (typical)
● Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks – Uniform 64 KByte overlay blocks
● Fast Erase and Byte-Program: – Chip-Erase Time: 35 ms (typical) – Sector-/Block-Erase Time: 18 ms (typical) – Byte-Program Time: 7 µs (typical)
● Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations
● End-of-Write Detection – Software polling the BUSY bit in Status Register – Busy Status readout on SO pin in AAI Mode
● Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device
● Write Protection (WP#) – Enables/Disa...
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