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SST29EE010 - 1 Mbit (128K x8) Page-Mode EEPROM

General Description

The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Key Features

  • Single Voltage Read and Write Operations.
  • 5.0V-only for SST29EE010.
  • 3.0-3.6V for SST29LE010.
  • 2.7-3.6V for SST29VE010.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Low Power Consumption.
  • Active Current: 20 mA (typical) for 5V and 10 mA www. DataSheet4U. com (typical) for 3.0/2.7V.
  • Standby Current: 10 µA (typical).
  • Fast Page-Write Operation.

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Datasheet Details

Part number SST29EE010
Manufacturer SST
File Size 376.39 KB
Description 1 Mbit (128K x8) Page-Mode EEPROM
Datasheet download datasheet SST29EE010 Datasheet

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Other Datasheets by SST

Part Number Description
SST29EE512 512 Kilobit (64K x8) Page-Mode EEPROM
SST29LE010 1 Mbit (128K x8) Page-Mode EEPROM
SST29LE512 512 Kilobit (64K x8) Page-Mode EEPROM
SST29VE010 1 Mbit (128K x8) Page-Mode EEPROM
SST29VE512 512 Kilobit (64K x8) Page-Mode EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE010 – 3.0-3.6V for SST29LE010 – 2.7-3.6V for SST29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA www.DataSheet4U.com (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 1024 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) • Fast Read Access Time – 5.0V-only operation: 70 and 90 ns – 3.0-3.