SST29EE512 Overview
The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST29EE512/29LE512/29VE512 write with a single power supply.
SST29EE512 Key Features
- Single Voltage Read and Write Operations
- 5.0V-only for SST29EE512
- 3.0-3.6V for SST29LE512
- 2.7-3.6V for SST29VE512
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption
- Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
- Standby Current: 10 µA (typical)