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SST29EE512 - 512 Kilobit (64K x8) Page-Mode EEPROM

General Description

The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Key Features

  • Single Voltage Read and Write Operations.
  • 5.0V-only for SST29EE512.
  • 3.0-3.6V for SST29LE512.
  • 2.7-3.6V for SST29VE512.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Low Power Consumption.
  • Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V.
  • Standby Current: 10 µA (typical).
  • Fast Page-Write Operation.
  • 128 Bytes per Pag.

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Datasheet Details

Part number SST29EE512
Manufacturer SST
File Size 265.94 KB
Description 512 Kilobit (64K x8) Page-Mode EEPROM
Datasheet download datasheet SST29EE512 Datasheet

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Other Datasheets by SST

Part Number Description
SST29EE010 1 Mbit (128K x8) Page-Mode EEPROM
SST29LE010 1 Mbit (128K x8) Page-Mode EEPROM
SST29LE512 512 Kilobit (64K x8) Page-Mode EEPROM
SST29VE010 1 Mbit (128K x8) Page-Mode EEPROM
SST29VE512 512 Kilobit (64K x8) Page-Mode EEPROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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512 Kilobit (64K x8) Page-Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 512 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 2.5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) Data Sheet • Fast Read Access Time – 5.0V-only operation: 70 and 90 ns – 3.0-3.6V operation: 150 and 200 ns – 2.7-3.