SST SST29VE010
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE010 write with a single power supply.| Part No. | SST29VE010 |
|---|---|
| Datasheet | SST29VE010 Download |
| Manufacturer |  SST |
| Description | 1 Mbit (128K x8) Page-Mode EEPROM |
| Buy | Stock & Price |
FEATURES
:● Single Voltage Read and Write Operations – 5.0V-only for SST29EE010 – 3.0-3.6V for SST29LE010 – 2.7-3.6V for SST29VE010
● Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V – Standby Current: 10 µA (typical)
● Fast Page-Write Operation – 128 Bytes per Page, 1024 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical)
● Fast Read Access Time – 5.0V-only operation: 70 and 90 ns – 3.0-3.6V operation: 150 and 200 ns – 2.7-3.6V operation: 200 and 250 ns
● Latched Address and Data
● Automatic Write Timing – Internal VPP Generation
● End of Write Detection – Toggle Bit – Data# Polling
● Hardware and Software Data Protection
● Product Identification can be accessed via Software Operation
● TTL I/O Compatibility
● JEDEC Standard – Flash EEPROM Pinouts and comman...
