SST32HF164 Overview
Featuring high performance Word-Program, the flash memory bank provides a maximum Word-Program time of 14 µsec. The entire flash memory bank can be erased and programmed word-by-word in typically 8 seconds for the SST32HF802 and 15 seconds for the SST32HF162/164, when using interface.
SST32HF164 Key Features
- MPF + SRAM boMemory
- SST32HF802: 512K x16 Flash + 128K x16 SRAM
- SST32HF162: 1M x16 Flash + 128K x16 SRAM
- SST32HF164: 1M x16 Flash + 256K x16 SRAM
- Single 2.7-3.3V Read and Write Operations
- Concurrent Operation
- Read from or write to SRAM while Erase/Program Flash
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention