SST32HF1681 Datasheet | SST

FEATURES : - bo Memories organized as: - SST32HF1621C: 1M x16 Flash + 128K x16 SRAM - SST32HF1641x: 1M x16 Flash + 256K x16 SRAM - SST32HF1681: 1M x16 Flash + 256K x16 SRAM - SST32HF3241x: 2M x16 Flash + 256K x16 SRAM - SST32HF3281: 2M x16 Flash + 512K x16 SRAM - Single 2.7-3.3V Read and Write Operations - Concurrent Operation - Read from or Write to SRAM while Erase/Program Flash - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption: - Active Current: 15 m A (typical) for Flash or SRAM Read - Standby Current: - SST32HFx1: 60 µA (typical) - SST32HFx1C: 12 µA (typical) - Flexible Erase Capability - Uniform 2 KWord sectors - Uniform 32 KWord size blocks - Erase-Suspend/Erase-Resume Capabilities - Security-ID Feature - SST: 128 bits; User: 128 bits - Hardware Block-Protection/WP# Input Pin - Bottom Block-Protection (bottom 32 KWord) - Fast Read Access Times: - Flash: 70 ns - SRAM: 70 ns - Latched Address and Data for Flash - Flash Fast Erase and Word-Program: - Sector-Erase Time: 18 ms (typical) - Block-Erase Time: 18 ms (typical) - Chip-Erase Time: 40 ms (typical) - Word-Program Time: 7 µs (typical) - Flash Automatic Erase and Program Timing - Internal VPP Generation - Flash End-of-Write Detection - Toggle...