SST32HF324C Overview
The SST32HF324C boMemory devices integrate a CMOS flash memory bank with a CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST’s proprietary, high-performance SuperFlash technology. Featuring high performance Word-Program, the flash memory bank provides a maximum Word-Program time of 7 µsec. To protect against inadvertent flash write, the SST32HF324C devices contain on-chip hardware and...
SST32HF324C Key Features
- boMemory organized as
- 2M x16 Flash + 256K x16 SRAM
- Single 2.7-3.3V Read and Write Operations
- Concurrent Operation
- Read from or Write to SRAM while Erase/Program Flash
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption
- Active Current: 15 mA (typical) for Flash or SRAM Read