SST SST32HF802
the SST32HF802 and 15 seconds for the SST32HF162/164, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. The SST32HF802/162/164 devices consist of two independent memory banks with respective bank enable signals. The Flash and SRAM memory banks are superimposed in the same memory address space.| Part No. | SST32HF802 |
|---|---|
| Datasheet | SST32HF802 Download |
| Manufacturer |  SST |
| Description | Multi-Purpose Flash (MPF) + SRAM ComboMemory |
| Buy | Stock & Price |
FEATURES
:● MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM – SST32HF164: 1M x16 Flash + 256K x16 SRAM
● Single 2.7-3.3V Read and Write Operations
● Concurrent Operation – Read from or write to SRAM while Erase/Program Flash
● Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention
● Low Power Consumption: – Active Current: 15 mA (typical) for Flash or SRAM Read – Standby Current: 20 µA (typical)
● Flexible Erase Capability – Uniform 2 KWord sectors – Uniform 32 KWord size blocks
● Fast Read Access Times: – Flash: 70 ns and 90 ns – SRAM: 70 ns and 90 ns
● Latched Address and Data for Flash
● Flash Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: SST32HF802: 8 seconds (typical) SST32HF162/164: 15 seconds (typical)
● Flash Automatic Erase a...
