SST32HF802 Datasheet | SST

FEATURES : - MPF + SRAM bo Memory - SST32HF802: 512K x16 Flash + 128K x16 SRAM - SST32HF162: 1M x16 Flash + 128K x16 SRAM - SST32HF164: 1M x16 Flash + 256K x16 SRAM - Single 2.7-3.3V Read and Write Operations - Concurrent Operation - Read from or write to SRAM while Erase/Program Flash - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption: - Active Current: 15 m A (typical) for Flash or SRAM Read - Standby Current: 20 µA (typical) - Flexible Erase Capability - Uniform 2 KWord sectors - Uniform 32 KWord size blocks - Fast Read Access Times: - Flash: 70 ns and 90 ns - SRAM: 70 ns and 90 ns - Latched Address and Data for Flash - Flash Fast Erase and Word-Program: - Sector-Erase Time: 18 ms (typical) - Block-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Word-Program Time: 14 µs (typical) - Chip Rewrite Time: SST32HF802: 8 seconds (typical) SST32HF162/164: 15 seconds (typical) - Flash Automatic Erase and Program Timing - Internal VPP Generation - Flash End-of-Write Detection - Toggle Bit - Data# Polling - CMOS I/O patibility - JEDEC Standard mand Set - Package Available - 48-lead TSOP (12mm x 20mm) - 48-ball TBGA (10mm x 12mm) PRODUCT DESCRIPTION The SST32HF802/162/164 bo Memory devices integrate a 512K x16 or 1M x16 CMOS flash memory bank with a 128K x16 or 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST’s proprietary, high performance Super Flash technology. Featuring high performance Word-Program, the flash memory bank provides a maximum Word-Program time of 14 µsec. The entire flash memory bank can be erased and programmed word-by-word in typically 8 seconds for the SST32HF802 and 15 seconds for the SST32HF162/164, when using interface features such as Toggle Bit or Data# Polling to indicate the pletion of Program operation. To protect against inadvertent flash write, the SST32HF802/ 162/164 devices contain on-chip hardware and software data...