STD2NC45-1 Datasheet | STMicroelectronics

N-channel 450 V, 4.1 Ω, 1.5 A, IPAK SuperMESH™ Power MOSFET Features - Extremely high dv/dt capability - 100% avalanche tested - Gate charge minimized - New high voltage benchmark Application - Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1. Device...