1803DH
1803DH is ST1803DH manufactured by STMicroelectronics.
DESCRIPTION
The ST1803DHI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
RBE =25 Ω
T yp.
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction T emperature Value 1500 600 7 10 15 4 50 -65 to 150 150 Uni t V V V A A A W o o
January 2000
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ST1803DHI
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.5 o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symb ol I CES I EBO V CE(sat )∗ V BE(s at)∗ h FE∗ VF BV EB0 Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain Diode F orward Voltage Emitter-Breakdown Voltage INDUCTIVE LOAD Storage Time Fall Time Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 4 V IC = 4 A IC = 4 A IC = 4 A IC = 1 A I C = 4.5 A IF = 5 A I E = 700 m A IC = 4 A L B = 5 µH f = 16 KHz IBon (END) = 0.8 A V BB = -2.5 V 7 IB = 0.8 A IB = 1.2 A IB = 0.8 A V CE = 5 V V CE = 5 V 10 4 15 1.5 Tj = 125 C 130 3 o
Min.
Typ .
Max. 1 2 400 5 1.5 1.2 20 9 2
Un it m A m A m A V V
V V ts tf
5 0.3
6 0.6
µs µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
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ST1803DHI
Derating Curve Biase Emitter Saturation Voltage
Collector Emitter Saturation Voltage
DC Current Gain
Power Losses At 16 KHz
Switching Time Inductive Load
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ST1803DHI...
