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1N5822U - Aerospace 40V power Schottky rectifier

General Description

The 1N5822U Schottky diode is ESCC qualified.

It is housed in a surface mount hermetically sealed ceramic LCC-2B package whose footprint is fully compatible with industry standard as D5B.

Its full planar technology allows superior performances and high reliability up to 150 °C junction temperature.

Key Features

  • Low forward voltage drop.
  • Very small conduction losses.
  • Ultrafast switchings with negligible losses.
  • High thermal conductivity materials.
  • Surface mount hermetic package.
  • Radiation performance.
  • 150 krad (Si) low dose rate.
  • 3 Mrad (Si) high dose rate.
  • ESCC qualified: detail specification 5106/020.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A K K A Leadless chip carrier 2 (LCC-2B) Product status link 1N5822U Product summary IF(AV) 3A VRRM 40 V VF(max.) 0.485 V TJ(max.