2NS04Z Datasheet | STMicroelectronics

DESCRIPTION This fully clamped MOSFET is produced by using the latest advanced pany’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also remended. TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ABS,SOLENOID DRIVERS s POWER TOOLS s ORDERING INFORMATION SALES TYPE STP62NS04Z MARKING P62NS04Z PACKAGE TO-220 PACKAGING TUBE November 2003 1/6 .Data Sheet.in STP62NS04Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDG VGS ID (- ) ID (- ) IDG IGS IDM ( ) PTOT dv/dt (1) EAS (2) VESD Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Gate Current (continuous) Gate Source Current (continuous) Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy ESD(HBM-C=100 p F, R=1.5 KΩ) Storage Temperature Operating Junction Temperature Value CLAMPED CLAMPED CLAMPED 40 40 ± 50 ± 50 160 110 0.74 5 500 8 - 55 to 175 Unit V V V A A m A m A A W W/°C V/ns m J k V °C (- )Pulse width limited by safe operating area (- ) Current Limited by Package (1) ISD ≤40A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (2) Starting Tj = 25 °C, ID = 20A, VDD = 20 V THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose (1.6mm from case, for 10sec) 1.36 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS VGSS Parameter Clamped Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate-Source Breakdown Voltage Test Conditions ID = 1 m...