2STF1525
Features
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- Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed
4 3 2 1
Applications
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Emergency lighting LED Motherboard and hard disk drive Mobile equipment Battery charger Voltage regulation Figure 1.
SOT-89
Internal schematic diagram
Description
The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Table 1.
Device summary
Marking 1525 Package SOT-89 Packaging Tape and reel
Order codes 2STF1525
June 2009
Doc ID 15794 Rev 1
1/7
.st. 7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
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Electrical ratings
Table 2.
Symbol VCEX VCEO VEBO IC ICM IB PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (VBE =...
