53NA50 Datasheet (PDF) Download
STMicroelectronics
53NA50

Key Features

  • ) P to t Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor T st g Tj V ISO Storage Temperature Max. Operating Junction T emperature Insulation W ithhstand Voltage (AC-RMS)
  • ) Pulse width limited by safe operating area