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STP5NB90 STP5NB90FP
N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET
PRELIMINARY DATA TYPE ST P5NB90 ST P5NB90FP
s s
V DSS 900 V 900 V
R DS(on) < 2.5 Ω < 2.5 Ω
ID 5 A 5 A
TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES www.DataSheet4U.com s GATE CHARGE MINIMIZED
3
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
5NB90 Datasheet
