5NK60Z - ST5NK60Z

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 www. DataS.

ST Microelectronics

📥 Download Datasheet

Datasheet Details

Part number	5NK60Z
Manufacturer	STMicroelectronics
File Size	486.71 KB
Description	ST5NK60Z
Datasheet	5NK60Z Datasheet
Additional preview pages of the 5NK60Z datasheet.

📁 Similar Datasheet

5NK80Z - STP5NK80Z (STMicroelectronics)

Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com STP5NK60Z - STP5NK60ZFP STD5NK60Z N-CHANNEL 600V - 1.2Ω - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 1.6 Ω < 1.6 Ω < 1.6 Ω ID 5A 5A 5A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Published: Sep 10, 2009 |