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74V2G03 - DUAL 2-INPUT OPEN DRAIN NAND GATE

General Description

The 74V2G03 is an advanced high-speed CMOS DUAL 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.

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Other Datasheets by STMicroelectronics

Part Number Description
74V2T00 DUAL 2-INPUT NAND GATE
74V2T03 DUAL 2-INPUT OPEN DRAIN NAND GATE
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74V2T07 TRIPLE BUFFER
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www.DataSheet4U.com 74V2G03 DUAL 2-INPUT OPEN DRAIN NAND GATE s s s s s s HIGH SPEED: tPD = 3.9ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA = 25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY ORDER CODES PACKAGE SOT23-8L SOT23-8L DESCRIPTION The 74V2G03 is an advanced high-speed CMOS DUAL 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. The device can, with an external pull-up resistor, be used in wired AND configuration.