Datasheet Details
| Part number | 93C46CB3 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 167.88 KB |
| Description | ST93C46CB |
| Datasheet | 93C46CB3_STMicroelectronics.pdf |
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Overview: ST93C46A,46C,46T ST93C47C,47T www.datasheet4u.com 1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST93C46 version – 3V to 5.5V for ST93C47 version SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCE for ”C” VERSION ST93C46A, ST93C46C, ST93C46T, ST93C47C, ST93C47T are replaced by the M93C46 8 1 PSDIP8 (B) 0.
| Part number | 93C46CB3 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 167.88 KB |
| Description | ST93C46CB |
| Datasheet | 93C46CB3_STMicroelectronics.pdf |
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|
|
This specification covers a range of 1K bit serial EEPROM products, the ST93C46A,46C,46T specified at 5V±10% and the ST93C47C,47T specified at 3V to 5.5V.
In the text, products are referred to as ST93C46.
The ST93C46 is a 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High EnduranceSingle Polysilicon CMOS technology.
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