BUH1215 Datasheet | STMicroelectronics

DESCRIPTION The BUH1215 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. 3 2 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1500 700 10 16 22 9 12 200 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 January 1999 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symb ol I CES I EBO V CEO(sus) V EBO V CE(sat )∗ V BE(s at)∗ h F E∗ Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 m A I E = 10 m A I C = 12 A I C = 12 A I C = 12 A I C = 12 A IB = 2.4 A IB = 2.4 A VCE = 5 V VCE = 5 V 7 5 10 700 10 1.5 1.5 14 Tj = 125 C o Min. Typ . Max. 0.2 2 100 Un it m A m A µA V V V V Tj = 100 C o ts tf ts tf V CC = 400 V I B1 = 2 A I C = 12 A I B1 = 2 A I C = 12 A I B2 = -6 A 1.5 110 4 220 µs ns µs ns f = 31250 Hz I B2 = -1.5 A  π 6 V c eflybac k = 1050 sin  10  t V 5  ts tf INDUCTIVE LO AD Storage Time Fall Time f = 64 KHz V BE(off ) = -2 A π  V c eflybac k = 1200 sin  106 t V 5   IC = 6 A I B1 = 1 A 3.5 180 µs ns ∗ Pulsed: Pulse duration = 300 µs, duty...