• Part: BUH513
  • Description: High Voltage Fast Switching NPN Power Transistor
  • Category: Transistor
  • Manufacturer: STMicroelectronics
  • Size: 96.37 KB
Download BUH513 Datasheet PDF
STMicroelectronics
BUH513
BUH513 is High Voltage Fast Switching NPN Power Transistor manufactured by STMicroelectronics.
DESCRIPTION The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ymb ol V CBO V CEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipat ion at Tc = 25 o C Storage Temperature Max. O perating Junction Temperature June 1996 V alu e 1300 700 10 8 12 5 8 50 -65 to 150 150 Unit V V V A A A A W o C o C 1/7 THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 2 .5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol ICES IEBO VCEO(s us) VEBO VCE(sat)∗ VBE(sat )∗ h FE∗ ts tf ts tf Parameter Collector Cut-off Current (VBE = 0) Emitter Cut- off Current (IC = 0) Col lec t or-E mit t er Sustaining Voltage Emitter-Base Voltage (IC = 0) Col lec t or-E mit t er Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time T est Con ditio ns VCE = 1300 V VCE = 1300 V Tj = 125 o C VEB = 5 V IC = 100 m A IE = 10 m A IC = 5 A IB = 1.25 A IC = 5 A IB = 1.25 A IC = 5 A VCE = 5 V IC = 5 A VCE = 5 V Tj = 100 o C VCC = 400 V IC = 5 A IB1 = 1.25 A IB2 = 2.5 A IC = 5 A f = 15625 Hz IB1 = 1.25 A IB2 = -2.5 A Vcef ly back = 1050...