BUL3N7 Datasheet | STMicroelectronics

Features - - - - MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 2 3 Applications - 1 ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING TO-220 Description The BUL3N7 is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in pact fluorescent lamps, H.F. ballast voltage FED where it is coupled with the BUL3P5, its plementary PNP transistor. Internal Schematic Diagram Order Codes Part Number BUL3N7 Marking BUL3N7 Package TO-220 Packing TUBE December 2005 rev.1 1/10 .st. 10 1 Absolute Maximum Ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Absolute Maximum Ratings Absolute Maximum Rating Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150°C) Collector Current Collector Peak Current (t P < 5ms) Base Current Base Peak Current (t P < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Value 700 400 V(BR)EBO 3 6 1.5 3 60 -65 to 150 150 Unit V V V A A A A W °C °C Table 2. Symbol Rth J-case Rth J-amb Thermal Data Parameter Thermal Resistance Junction-Case_______________Max Thermal Resistance Junction-Ambient ______ ______Max Value 2.08 62.5 Unit °C/W °C/W 2/10 2 Electrical Characteristics Table 3. Symbol ICES Electrical Characteristics Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Parameter Collector Cut-off Current (V BE = 0) Test Conditions VCE = 700 V VCE = 700 V__ __TC = 125°C 10 400 0.5 0.5 1.1 1.2 1.3 10 18 4 Min. Typ. Max. 0.1 0.5 18 Unit m A m A V V V V V V V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 m A (IC = 0)...