BULB128-1 Datasheet | STMicroelectronics

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. I2PAK (TO-262) (Suffix "-1") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 9 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o o September 2003 1/7 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CES V EBO Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Voltage (I C = 0) Test Conditions V CE = 700 V V CE = 700 V I E = 10 m A I C = 100 m A L = 25 m H T C = 125 o C 9 400 Min. Typ. Max. 100 500 Unit µA µA V V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) ∗ Collector Cut-Off Current (I B = 0) Collector-Emitter Saturation Voltage V CE = 400 V IC IC IC IC = = = = 0.5 A 1A 2.5 A 4A IB IB IB IB = = = = 0.1 A 0.2 A 0.5 A 1A 250 0.7 1 1.5 0.5 1.1 1.2 1.3 10 14 1.5 0.2 0.6 0.1 28 3 0.4 1 0.2 µA V V V V V V V V BE(sat) ∗ Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time I C = 0.5 A IC = 1 A I C = 2.5 A I C = 10 m A IC = 2 A V CC = 125 V I B1 = 0.4 A T p = 30 µ s IC = 2 A V BE(off) = -5 V V clamp = 200 V I B = 0.1 A I B = 0.2 A I B = 0.5 A...