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BULT3N4 Datasheet

Power Bipolar Medium Voltage Fast-switching NPN Power Transistor

Manufacturer: STMicroelectronics

BULT3N4 Overview

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in pact fluorescent lamps, where it is coupled with the BULT3P3, its plementary PNP...

BULT3N4 Key Features

  • Electronic ballast for fluorescent lighting

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