BULT3N4 Datasheet | STMicroelectronics

Features - - - Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Application - Electronic ballast for fluorescent lighting 3 2 SOT-32 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in pact fluorescent lamps, where it is coupled with the BULT3P3, its plementary PNP transistor. Figure 1. Internal schematic diagram Table 1. Device summary Marking BULT3N4 Package SOT-32 Packing Tube Order code BULT3N4 September 2009 Doc ID 16299 Rev 1 1/8 .st. 8 Electrical ratings .. Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 1.5 A, tp < 100 µs, Tj < 150°C) Collector current Collector peak current (t P < 5 ms) Base current Base peak current (t P < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 400 200 V(BR)EBO 3 6 1.5 3 32 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol Rth JC Thermal data Parameter Thermal resistance junction-case max Value 3.9 Unit °C/W 2/8 Doc ID 16299 Rev 1 .. Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified Table 4. Symbol ICES V(BR)EBO Electrical characteristics Parameter Collector cut-off current (VBE = 0) Emitter-base breakdown voltage (IC = 0) Test conditions VCE = 400 V VCE = 400 V IE = 10 m A TC = 125 °C 9 Min. Typ. Max. 0.1 0.5 18 Unit m A m A V Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage Base-emitter saturation...