Datasheet Summary
®
STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE STGB10NB37LZ s s s s s s
V CES CLAMPED
V CE(s at) < 1.8 V
IC 10 A
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)
3 1
DESCRIPTION Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection....