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GB20NB32LZ-1 - N-CHANNEL PowerMESH TM IGBT

Download the GB20NB32LZ-1 datasheet PDF. This datasheet also covers the GB20NB32LZ variant, as both devices belong to the same n-channel powermesh tm igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

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Note: The manufacturer provides a single datasheet file (GB20NB32LZ_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
GB20NB32LZ N-CHANNEL PowerMESH TM IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB20NB32LZ STGB20NB32LZ-1 s s s s s VCES CLAMPED CLAMPED VCE(sat) < 2.0 V < 2.0 V IC 20 A 20 A 3 1 3 12 POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE D 2PAK I2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.