GE200NB60S
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).
Key Features
- High input impedance (voltage driven) Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capability ISOTOP
