Datasheet Summary
M29F160BT M29F160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory
PRELIMINARY DATA s
SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME
- 8µs per Byte/Word typical 35 MEMORY BLOCKS
- 1 Boot Block (Top or Bottom Location)
- 2 Parameter and 32 Main Blocks s s s s
PROGRAM/ERASE CONTROLLER
- Embedded Byte/Word Program algorithm
- Embedded Multi-Block/Chip Erase algorithm
- Status Register Polling and Toggle Bits
- Ready/Busy Output Pin
TSOP48 (N) 12 x 20mm s
ERASE SUSPEND and RESUME MODES
- Read and Program another Block during Erase Suspend
Figure 1. Logic Diagram s
UNLOCK BYPASS PROGRAM MAND
- Faster...