M29F800DT
FEATURES
SUMMARY s SUPPLY VOLTAGE s s
Figure 1. Packages
- VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME
- 10µs per Byte/Word typical 19 MEMORY BLOCKS
- 1 Boot Block (Top or Bottom Location)
- 2 Parameter and 16 Main Blocks
SO44 (M) s s
PROGRAM/ERASE CONTROLLER
- Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES
- Read and Program another Block during Erase Suspend s s
UNLOCK BYPASS PROGRAM MAND
- Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE MON FLASH INTERFACE
- 64 bit Security Code LOW POWER CONSUMPTION
- Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE
- Manufacturer Code: 0020h
- Top Device Code M29F800DT: 22ECh
- Bottom Device Code M29F800DB: 2258h
TSOP48 (N) 12 x 20mm s s s s s
February 2003
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M29F800DT, M29F800DB
TABLE OF CONTENTS SUMMARY DESCRIPTION
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