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M29KW032E
32 Mbit (2Mb x16, Uniform Block) 3V Supply LightFlash™ Memory
PRODUCT PREVIEW
FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Read – VPP = 11.4V to 12.6V for Program and Erase
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Figure 1. Packages
ACCESS TIME: 90, 110ns PROGRAMMING TIME – 9µs per Word typical – Multiple Word Programming Option (4s typical Chip Program) TSOP48 (N) 12 x 20mm
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ERASE TIME – 21s typical factory Chip Erase UNIFORM BLOCKS – 16 blocks of 2 Mbits
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FBGA
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PROGRAM/ERASE CONTROLLER – Embedded Word Program algorithms 10,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code : 88ACh TFBGA48 (ZA) 6 x 9mm
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July 2002
This is preliminary information on a new product now in development. Details are subject to change without notice.