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M29KW016E - 16 Mbit (1Mb x16 / Uniform Block) 3V Supply LightFlash Memory

Description

7 Address Inputs (A0-A19)

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Datasheet preview – M29KW016E

Datasheet Details

Part number M29KW016E
Manufacturer STMicroelectronics
File Size 261.45 KB
Description 16 Mbit (1Mb x16 / Uniform Block) 3V Supply LightFlash Memory
Datasheet download datasheet M29KW016E Datasheet
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M29KW016E 16 Mbit (1Mb x16, Uniform Block) 3V Supply LightFlash™ Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Read – VPP = 11.4V to 12.6V for Program and Erase s s Figure 1. Packages ACCESS TIME: 90, 110ns PROGRAMMING TIME – 9µs per Word typical – Multiple Word Programming Option (2s typical Chip Program) SO44 (M) s ERASE TIME – 11s typical factory Chip Erase UNIFORM BLOCKS – 8 blocks of 2 Mbits PROGRAM/ERASE CONTROLLER – Embedded Word Program algorithms 10,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code : 88ABh TFBGA48 (ZA) 6 x 9mm TSOP48 (N) 12 x 20mm s s s s FBGA July 2002 This is preliminary information on a new product now in development or undergoing evaluation.
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