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M29W040B Datasheet 4 Mbit 512kb X8 / Uniform Block Low Voltage Single Supply Flash Memory

Manufacturer: STMicroelectronics

Overview: M29W040B 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte typical 8 UNIFORM 64 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits PLCC32 (K) TSOP32 (N) 8 x 20mm s s s s s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend TSOP32 (NZ) 8 x 14mm s UNLOCK BYPASS PROGRAM MAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby s Figure 1. Logic Diagram s 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year VCC s s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: E3h A0-A18 19 8 DQ0-DQ7 W E G M29W040B VSS AI02953 March 2000 1/20 M29W040B Figure 2. PLCC Connections Figure 3. TSOP Connections 1 32 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 A14 A13 A8 A9 A11 G A10 E DQ7 9 M29W040B 25 17 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 AI02951 A11 A9 A8 A13 A14 A17 W VCC A18 A16 A15 A12 A7 A6 A5 A4 A12 A15 A16 A18 VCC W A17 1 32 8 9 M29W040B 25 24 16 17 AI02952 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 Table 1.

General Description

The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed.

These operations can be performed using a single low voltage (2.7 to 3.6V) supply.

On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

Key Features

  • e of Bus Write operations will result in the memory returning to Read mode. The.

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M29W040B Distributor