M29W320DB Datasheet | STMicroelectronics

FEATURES SUMMARY s SUPPLY VOLTAGE - VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages - VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME - 10µs per Byte/Word typical 67 MEMORY BLOCKS - 1 Boot Block (Top or Bottom Location) - 2 Parameter and 64 Main Blocks TSOP48 (N) 12 x 20mm s s PROGRAM/ERASE CONTROLLER - Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES - Read and Program another Block during Erase Suspend FBGA s TFBGA63 (ZA) 63 ball array s UNLOCK BYPASS PROGRAM MAND - Faster Production/Batch Programming VPP/WP PIN for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE MON FLASH INTERFACE - 64 bit Security Code LOW POWER CONSUMPTION - Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Top Device Code M29W320DT: 22CAh - Bottom Device Code M29W320DB: 22CBh s s s s s s May 2003 1/44 M29W320DT, M29W320DB TABLE OF CONTENTS SUMMARY DESCRIPTION - - - - - - - - - - - . . . . 5 Figure 2. Logic Diagram - - - - - - - - - - - . . . 5 Table 1. Signal Names - - - - -...