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M29W512B - 512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory

General Description

The M29W512B is a 512 Kbit (64Kb x8) non-volatile memory that can be read, erased and reprogrammed.

These operations can be performed using a single low voltage (2.7 to 3.6V) supply.

On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

Key Features

  • s 20h. The Device Code can be read using a Bus Read operation with A0 = VIH.

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Datasheet Details

Part number M29W512B
Manufacturer STMicroelectronics
File Size 139.87 KB
Description 512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
Datasheet download datasheet M29W512B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M29W512B 512 Kbit (64Kb x8, Bulk) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs per Byte typical PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Chip Erase algorithm – Status Register Polling and Toggle Bits TSOP32 (NZ) 8 x 14mm PLCC32 (K) s s s s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 27h VCC s s s Figure 1. Logic Diagram s 16 A0-A15 W E G M29W512B 8 DQ0-DQ7 VSS AI02743 March 2000 1/18 M29W512B Figure 2.