Datasheet Summary
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M58PR256LE M58PR512LE M58PR001LE
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
Features
- Supply voltage
- VDD = 1.7 V to 2.0 V for program, erase and read
- VDDQ = 1.7 V to 2.0 V for I/O buffers
- VPP = 9 V for fast program Synchronous/asynchronous read
- Synchronous burst read mode: 108 MHz, 66 MHz
- Asynchronous page read mode
- Random access: 96 ns Programming time
- 4.2 µs typical word program time using Buffer Enhanced Factory Program mand Memory organization
- Multiple bank memory array: 32 Mbit banks (256 Mb devices) 64 Mbit banks (512 Mb devices) 128 Mbit banks (1 Gb devices)
- Four EFA (extended flash...