M58WR032EB Description
8 VFBGA Connections (Top view through package) . 11 Address Inputs (A0-A20). 11 Data Input/Output (DQ0-DQ15).
M58WR032EB Key Features
- SUPPLY VOLTAGE
- VDD = 1.65V to 2.2V for Program, Erase and Read
- VDDQ = 1.65V to 3.3V for I/O Buffers
- VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ
- Synchronous Burst Read mode: 54MHz
- Asynchronous/ Synchronous Page Read mode
- Random Access: 70, 80, 100ns PROGRAMMING TIME
- 8µs by Word typical for Fast Factory Program
- Double/Quadruple Word Program option
- Enhanced Factory Program options MEMORY BLOCKS