M58WR032EB
M58WR032EB is Flash Memory manufactured by STMicroelectronics.
FEATURES
SUMMARY
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- SUPPLY VOLTAGE
- VDD = 1.65V to 2.2V for Program, Erase and Read
- VDDQ = 1.65V to 3.3V for I/O Buffers
- VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ
- Synchronous Burst Read mode: 54MHz
- Asynchronous/ Synchronous Page Read mode
- Random Access: 70, 80, 100ns PROGRAMMING TIME
- 8µs by Word typical for Fast Factory Program
- Double/Quadruple Word Program option
- Enhanced Factory Program options MEMORY BLOCKS
- Multiple Bank Memory Array: 4 Mbit Banks
- Parameter Blocks (Top or Bottom location) DUAL OPERATIONS
- Program Erase in one Bank while Read in others
- No delay between Read and Write operations BLOCK LOCKING
- All blocks locked at Power up
- Any bination of blocks can be locked
- WP for Block Lock-Down SECURITY
- 128 bit user programmable OTP cells
- 64 bit unique device number
- One parameter block permanently lockable MON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK
Figure 1. Package
FBGA
VFBGA56 (ZB) 7.7 x 9 mm
- ELECTRONIC SIGNATURE
- Manufacturer Code: 20h
- Top Device Code, M58WR032ET: 8814h
- Bottom Device Code, M58WR032EB: 8815h
April 2004
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M58WR032ET, M58WR032EB
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