M58WR032KU Datasheet | STMicroelectronics

Features - Supply voltage - VDD = 1.7 V to 2 V for Program, Erase and Read - VDDQ = 1.7 V to 2 V for I/O buffers - VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read - Synchronous Burst Read mode: 86 MHz - Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time - 10 µs by Word typical for Factory Program - Double/Quadruple Word Program option - Enhanced Factory Program options Memory blocks - Multiple Bank memory array: 4 Mbit Banks - Parameter Blocks (top or bottom location) Dual operations - Program Erase in one Bank while Read in others - No delay between Read and Write operations Block locking - All blocks locked at Power up - Any bination of blocks can be locked - WP for Block Lock-Down Security - 128 bit user programmable OTP cells - 64 bit unique device number mon Flash Interface (CFI) 100,000 program/erase cycles per block - - FBGA - - VFBGA44 (ZA) 7.5 × 5 mm - - .. - - Electronic signature - Manufacturer Code: 20h - Top Device Code, M58WR016KU: 8823h M58WR032KU: 8828h M58WR064KU: 88C0h - Bottom Device Code, M58WR016KL: 8824h M58WR032KL: 8829h M58WR064KL: 88C1h ECOPACK® packages available - - - - May 2007 Rev 1 1/123 .st. 1 Contents M58WRxxx KU, M58WRxxx KL Contents 1 2...