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M58WR032KU - Flash memories

General Description

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Key Features

  • Supply voltage.
  • VDD = 1.7 V to 2 V for Program, Erase and Read.
  • VDDQ = 1.7 V to 2 V for I/O buffers.
  • VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read.
  • Synchronous Burst Read mode: 86 MHz.
  • Random Access: 60 ns, 70 ns Synchronous Burst Read Suspend Programming time.
  • 10 µs by Word typical for Factory Program.
  • Double/Quadruple Word Program option.
  • Enhanced Factory Program options Memory.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.