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MD2310FX - High voltage NPN Power transistor

General Description

The MD2310FX is manufactured using planar technology with diffused collector adopting new and enhanced high voltage structure.

The MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage.

Figure 1.

Key Features

  • State-of-the-art technology:.
  • diffused collector “enhanced generation”.
  • Stable performance versus operating temperature variation.
  • Low base drive requirement.
  • Tight hFE range at operating collector current.
  • Fully insulated power package U. L. compliant.

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MD2310FX High voltage NPN power transistor for standard definition CRT display Features ■ State-of-the-art technology: – diffused collector “enhanced generation” ■ Stable performance versus operating temperature variation ■ Low base drive requirement ■ Tight hFE range at operating collector current ■ Fully insulated power package U.L. compliant Application ■ Horizontal deflection output for monitor and real flat TV Description The MD2310FX is manufactured using planar technology with diffused collector adopting new and enhanced high voltage structure. The MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage. 3 2 1 TO-3PF Figure 1. Internal schematic diagram Table 1.