| Part number | MJD50 |
|---|---|
| Datasheet | MJD50_STMicroelectronics.pdf |
| File Size | 87.20 KB |
| Manufacturer | STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor. INTERNAL SCHEMATIC DIAGRAM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJD50 | NPN Epitaxial Silicon Transistor | Fairchild |
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MJD50 | NPN SILICON POWER TRANSISTORS | Motorola |
 |
MJD50 | High Voltage Power Transistors | ON Semiconductor |
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MJD50 | NPN Epitaxial Silicon Transistor | Kexin |
 |
MJD50 | Silicon NPN Power Transistor | Inchange Semiconductor |
See all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| MJD122 | Complementary power Darlington transistors |
| MJD122-1 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| MJD127 | Complementary power Darlington transistors |
| MJD127-1 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| MJD127T4 | Complementary power Darlington transistors |
| MJD2955 | Complementary Silicon Power Transistors |
| MJD3055 | Complementary Silicon Power Transistors |
| MJD31B | Complementary Silicon Power Transistors |
| MJD31C | Low voltage NPN power transistor |
| MJD32B | COMPLEMENTARY SILICON POWER TRANSISTORS |
