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MJE802 - NPN power Darlington transistor

General Description

leteThe device is manufactured in planar technology owith “base island” layout and monolithic sDarlington configuration.

Figure 1.

duct(s) - Ob R1 typ.

Key Features

  • .
  • Good hFE linearity.
  • High fT frequency.
  • Monolithic Darlington configuration with )integrated antiparallel collector-emitter diode ct(s.

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MJE802 NPN power Darlington transistor Features . ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with )integrated antiparallel collector-emitter diode ct(sApplication du■ Linear and switching industrial equipment ProDescription leteThe device is manufactured in planar technology owith “base island” layout and monolithic sDarlington configuration. 1 2 3 SOT-32 Figure 1. Internal schematic diagram duct(s) - Ob R1 typ. = 15 kΩ Obsolete Pro R2 typ. = 100 Ω Table 1. Device summary Order code MJE802 Marking MJE802 Package SOT-32 August 2009 Doc ID 4958 Rev 4 Packaging Tube 1/8 www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings MJE802 Table 2.