The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications.
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MJE802 MJE803
SILICON NPN POWER DARLINGTON TRANSISTORS
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SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications.
3 2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Base-Emitter Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Max Operating Junction Temperature Value 80 80 5 4 0.
MJE803 Datasheet
