MJE803
DESCRIPTION
The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications.
3 2
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Base-Emitter Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Max Operating Junction Temperature Value 80 80 5 4 0.1 40 -65 to 150 150 Unit V V V A A W o o
For PNP types voltage and current values are negative.
January 1997
1/4
MJE802-MJ803
THERMAL DATA
R thj-amb Thermal Resistance Junction-ambient Max 3.13 o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter...
