MTP3N60FI datasheet by STMicroelectronics.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MTP3N60FI |
|---|---|
| Datasheet | MTP3N60FI MTP3N60 Datasheet (PDF) |
| File Size | 200.41 KB |
| Manufacturer | STMicroelectronics |
| Description | N-Channel MOSFET |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 20 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 1 mA ID = 1.5 A 3.9 Min. 4.5 2.5 Unit V Ω A V DS > ID( on) x RD S(on) max V...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTP3N60 | Power Field Effect Transistor | Motorola |
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