MTP6N60
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE MTP6N60 s s s s s
V DSS 600 V
R DS( on) < 1.2 Ω
ID 6.8 A
TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C APPLICATION ORIENTED CHARACTERIZATION
3 1 2
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT s
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(
- ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o
Value 600 600 ± 20 6.8 4.2 30 125 1 -65 to 150 150
Unit V V V A A A W W/o C o o
(- ) Pulse width...
