Full PDF Text Transcription for N2NE10 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
N2NE10. For precise diagrams, and layout, please refer to the original PDF.
® STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET™ POWER MOSFET TYPE STN2NE10 VDSS 100 V RDS(on) < 0.4 Ω ID 2A PRELIMINARY DATA s TYPICAL RDS(on) = 0.33 Ω s EX...
View more extracted text
RDS(on) < 0.4 Ω ID 2A PRELIMINARY DATA s TYPICAL RDS(on) = 0.33 Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100 % AVALANCHE TESTED 2 s APPLICATION ORIENTED CHARACTERIZATION )DESCRIPTION t(sThis Power Mosfet is the latest development of cSTMicroelectronics unique "Single Feature uSize™ " stip-based process. The resulting transidstor shows extremely high packing density for low roon-resistance, rugged avalanche characteristics Pand less critical alignment steps therefore a retemarkable manufacturing reproducibility. leAPPLICATIONS sos DC MOTOR CONTROL (DISK DRIVES,etc.