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P10NK60Z - N-CHANNEL Power MOSFET

General Description

These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's wellestablished strip-based PowerMESH™ layout.

Key Features

  • Type STB10NK60Z-1 STB10NK60ZT4 STP10NK60Z STP10NK60ZFP STW10NK60Z.
  • TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max ID Pw TAB 3 12 1 2 3 < 0.75 Ω 10 A 115 W < 0.75 Ω 10 A 115 W < 0.75 Ω 10 A 115 W < 0.75 Ω 10 A 35 W < 0.75 Ω 10 A 156 W TAB I2PAK 3 1 2 TO-220FP TO-220 3 1 2 1 3 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected Figure 1. D2PAK TO-247.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB10NK60Z, STP10NK60Z, STP10NK60ZFP, STW10NK60Z N-channel 600 V, 0.65 Ω typ., 10 A SuperMESH™ Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages Datasheet − production data Features Type STB10NK60Z-1 STB10NK60ZT4 STP10NK60Z STP10NK60ZFP STW10NK60Z ■ ■ ■ ■ TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max ID Pw TAB 3 12 1 2 3 < 0.75 Ω 10 A 115 W < 0.75 Ω 10 A 115 W < 0.75 Ω 10 A 115 W < 0.75 Ω 10 A 35 W < 0.75 Ω 10 A 156 W TAB I2PAK 3 1 2 TO-220FP TO-220 3 1 2 1 3 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected Figure 1.