Datasheet Summary
m o .c U 4 STP3NB80 t e STP3NB80FP e h S N
- CHANNEL 800V
- 4.6Ω
- 2.6A
- TO-220/TO-220FP a t PowerMESH™ MOSFET a .D w w w
..
®
TYPE
V DSS
R DS(on)
STP3NB80 STP3NB80FP
800 V 800 V
< 6.5 Ω < 6.5 Ω
2.6 A 2.6 A s s s s s
TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional...