Datasheet Summary
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S a t e e h
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STP3NB90 STP3NB90FP
N-CHANNEL 900V
- 4 Ω
- 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET
R DS(on) < 4.2 Ω < 4.2 Ω ID 3.5 A 3.5 A Pw 110 W 35 W
TYPE
VDSS 900 V 900 V
STP3NB90 STP3NB90FP
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES
3 1 2
TO-220
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest RDS(on)...